N. N.
TU Dortmund
Micro- and Nanoelectronics Devices Group
Emil-Figge-Str. 68
44227 Dortmund
Germany
Campus North
CT-G3, 3. floor
Phone +49 (0)231 / 755 - 3966
Fax +49 (0)231 / 755 - 4450
09.05.2011
NEUE INFORMATION
Betrifft : Vorlesung "Mikro- und Nanoelektronik" im SS 2011 von Prof. Dr. Joachim Knoch Im laufenden Semester wird die Klausur angeboten. Zur Vorbereitung startet die Übung ab Dienstag 17.05.2011, 10:15 im Seminarraum des Lehrstuhls (Folgetermine nach Absprache). Die Vorlesung ist als Video im Internet verfügbar.
02.11.2010
Press Release of the European Project STEEPER in The New York Times
See also movie to learn more about the project.
10.08.2010
Ein Termin zur Sprechstunde "Mikro/Nanoelektronik" verschiebt sich: alt: Montag 16.08. 14:00, wird ersetzt durch: Mittwoch 18.08. 14:00.
18.06.2010
Vorlesung HLT II: ACHTUNG: Nächste Vorlesung: 25.06.2010, 12:00Uhr
22.04.2010
Vorlesung Halbleitertechnologie findet im Block statt. Nächster Termin: 7.5.2010
21.04.2010
Neue Internet-Adresse. Die BMN-Seiten befinden sich ab sofort unter www.bmn.e-technik.tu-dortmund.de!
24.03.2010
Vorlesungsankündigung: Halbleitertechnologie II (Fortschrittliche Prozesse der HLT) beginnt Freitag, 16.04.2010, 13:15, CT-G3, Raum 3.25
21.07.2009
Lecture Video-FAQ online! Frequently asked questions and the respective answers are now available on video. Please check Downloads. Please also check continuously for new or updated lecture and exercise downloads!
03.07.2009
Homepage redesign online! The preliminary version of the group's new homepage is online. The redesign aims to provide a more detailed insight into the group's research and teaching activities.
18.05.2009
"X-Corder Ziel2" research pro- motion program approved for the IMS institute! The program contains the funding of two research positions for the duration of 36 months and enables the aquisition of additional state-of-the-art machinary for semi- conductor manufacturing.
Schottky-barrier (SB) MOS-FETs with metallic source/drain electrodes are currently attracting a renewed interest since they offer strongly reduced parasitic resistances and easier processing compared to conventional MOSFETs. However, the presence of a high SB and ambipolar operation deteriorate the device performance. We are working on the challenge of lowering the SB and suppressing the ambipolar operation by employing different contact schemes.
The limitation to a minimum inverse subthreshold slope of S = 60mV/dec of any conventional FET is a major obstacle to further reduce the supply voltage and hence the power consumption of integrated circuits. At present, the most promising device concept is the tunneling field-effect transistor (TFET). In our group we study the electronic transport in TFETs with simulations as well as experimentally.
The group offers final thesis to interested students. Miscellaneous topics comprising the fabrication of devices in our cleanroom facilities or device simulation are available. Click here to see details about the offered topics below.
Lecturer: Prof. Dr. Joachim Knoch / Marcel R. Müller
For BSc / Diploma students. Offered in summer terms (V 4 Ü 2, 9 Credit Points).
The first half of the lecture aims to explain in detail the physics of field-effect transistor devices (the basic switch microprocessors are built of) and to give insight into state-of-the-art nanoelectronics reseach topics. The course covers physics and engineering aspects including basic solid.state physics concepts, electronic transport in nanostructures, design, mode of operation and scaling of field-effect transistor as well as fabrication technology giving students a complete picture of nanoelectronics devices. The lecture also considers CMOS technology and gives an overview of how a microchip is designed. The second half gives more details about state-of-the-art research topics in nanoelectronis for future CMOS technology: Schottky-barrier MOSFETs, Tunnel-FETs, Graphene, Carbon Nanotubes and -wires and much more.
Lecturer: Prof. Dr. Joachim Knoch
For BSc / Diploma students. Offered in winter terms (V 2 Ü 1 + V 2 Ü 1, 9 Credit Points).
This course consists of two parts each constituting a (V2, Ü1) lecture. The aim of the first part is that students actively develop a simple tool for the simulation of quantum transport in nanoscale field-effect transistor devices based on a self-consistent solution of the Poisson and Schrödinger equation. The second part covers the silicon fabrication technology aspects needed to enable students to fabricate their own field-effect transistor device. Since students will actively produce their own simulation tool and fabricate FETs in our institute’s clean room facility the course is restricted to approximately 10 students.
Lecturer: Prof. Dr. Joachim Knoch
For MSc / Diploma students. Offered in winter terms (V 2 Ü 1, 4,5 Credit Points).
This lecture considers modern methods of device simulation used to calculate their electrical behavior. Simulations are used to predict the performance of devices before they are actually built. A quantummechanical concept called "Non-Equilibrium Greens Function" is used to capture the physical effects given by the extreme smallness of modern devices.
Instructor: Prof. Dr. Joachim Knoch
For BSc students. Offered in winter and summer terms.
The lab training is subdivided into two parts. The first part deals with the fabrication and characterization of so-called pseudo-MOSFETs and will take place at the clean room facility of the Institute of Intelligent Microsystems. The second part is offered by Arbeitsgebiet Mikrostrukturtechnik and will introduce students to the fabrication of light wave-guides made of PDMS.